Long wavelength transverse magnetic polarized absorption in 1.3 μm InAs/InGaAs dots-in-a-well type active regions
Identifieur interne : 000956 ( Main/Repository ); précédent : 000955; suivant : 000957Long wavelength transverse magnetic polarized absorption in 1.3 μm InAs/InGaAs dots-in-a-well type active regions
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Abstract
Edge-photovoltage measurements of InAs/GaAs 1.3 μm dot-in-a-well structures clearly show a ground state (GS) transverse magnetic (TM) absorption. Based on eight-band k.p calculations we attribute this GS TM absorption peak to transitions between GS electrons and low-lying excited hole states which possess a significant light-hole component of the correct symmetry to recombine with the GS electrons.
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<record><TEI><teiHeader><fileDesc><titleStmt><title xml:lang="en" level="a">Long wavelength transverse magnetic polarized absorption in 1.3 μm InAs/InGaAs dots-in-a-well type active regions</title><author><name sortKey="Crowley, M T" uniqKey="Crowley M">M. T. Crowley</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Center for High Technology Materials, University of New Mexico, 1313 Goddard SE</s1><s2>Albuquerque, NM 87106</s2><s3>USA</s3><sZ>1 aut.</sZ></inist:fA14><country>États-Unis</country><wicri:noRegion>Albuquerque, NM 87106</wicri:noRegion></affiliation></author><author><name sortKey="Heck, S C" uniqKey="Heck S">S. C. Heck</name><affiliation wicri:level="1"><inist:fA14 i1="02"><s1>Tyndall National Institute</s1><s2>Lee Maltings, Cork</s2><s3>IRL</s3><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ><sZ>7 aut.</sZ></inist:fA14><country>Irlande (pays)</country><wicri:noRegion>Tyndall National Institute</wicri:noRegion></affiliation></author><author><name sortKey="Healy, S B" uniqKey="Healy S">S. B. Healy</name><affiliation wicri:level="1"><inist:fA14 i1="02"><s1>Tyndall National Institute</s1><s2>Lee Maltings, Cork</s2><s3>IRL</s3><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ><sZ>7 aut.</sZ></inist:fA14><country>Irlande (pays)</country><wicri:noRegion>Tyndall National Institute</wicri:noRegion></affiliation></author><author><name sortKey="Osborne, S" uniqKey="Osborne S">S. Osborne</name><affiliation wicri:level="1"><inist:fA14 i1="02"><s1>Tyndall National Institute</s1><s2>Lee Maltings, Cork</s2><s3>IRL</s3><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ><sZ>7 aut.</sZ></inist:fA14><country>Irlande (pays)</country><wicri:noRegion>Tyndall National Institute</wicri:noRegion></affiliation></author><author><name sortKey="Williams, D P" uniqKey="Williams D">D. P. Williams</name><affiliation wicri:level="1"><inist:fA14 i1="02"><s1>Tyndall National Institute</s1><s2>Lee Maltings, Cork</s2><s3>IRL</s3><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ><sZ>7 aut.</sZ></inist:fA14><country>Irlande (pays)</country><wicri:noRegion>Tyndall National Institute</wicri:noRegion></affiliation><affiliation wicri:level="1"><inist:fA14 i1="03"><s1>Centre for Advanced Photonics and Process Analysis, Cork Institute of Technology</s1><s2>Bishopstown, Cork</s2><s3>IRL</s3><sZ>5 aut.</sZ></inist:fA14><country>Irlande (pays)</country><wicri:noRegion>Bishopstown, Cork</wicri:noRegion></affiliation></author><author><name sortKey="Schulz, S" uniqKey="Schulz S">S. Schulz</name><affiliation wicri:level="1"><inist:fA14 i1="02"><s1>Tyndall National Institute</s1><s2>Lee Maltings, Cork</s2><s3>IRL</s3><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ><sZ>7 aut.</sZ></inist:fA14><country>Irlande (pays)</country><wicri:noRegion>Tyndall National Institute</wicri:noRegion></affiliation></author><author><name sortKey="O Reilly, E P" uniqKey="O Reilly E">E. P. O Reilly</name><affiliation wicri:level="1"><inist:fA14 i1="02"><s1>Tyndall National Institute</s1><s2>Lee Maltings, Cork</s2><s3>IRL</s3><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ><sZ>7 aut.</sZ></inist:fA14><country>Irlande (pays)</country><wicri:noRegion>Tyndall National Institute</wicri:noRegion></affiliation><affiliation wicri:level="1"><inist:fA14 i1="04"><s1>Department of Physics, University College Cork</s1><s2>Cork</s2><s3>IRL</s3><sZ>7 aut.</sZ></inist:fA14><country>Irlande (pays)</country><wicri:noRegion>Cork</wicri:noRegion></affiliation></author></titleStmt><publicationStmt><idno type="inist">13-0083035</idno><date when="2013">2013</date><idno type="stanalyst">PASCAL 13-0083035 INIST</idno><idno type="RBID">Pascal:13-0083035</idno><idno type="wicri:Area/Main/Corpus">001268</idno><idno type="wicri:Area/Main/Repository">000956</idno></publicationStmt><seriesStmt><idno type="ISSN">0268-1242</idno><title level="j" type="abbreviated">Semicond. sci. technol.</title><title level="j" type="main">Semiconductor science and technology</title></seriesStmt></fileDesc><profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Excited states</term><term>Gallium arsenides</term><term>Ground states</term><term>III-V compound</term><term>III-V semiconductors</term><term>Indium arsenides</term><term>Optical absorption</term><term>Photovoltaic effects</term><term>Symmetry property</term><term>k.p calculations</term></keywords><keywords scheme="Pascal" xml:lang="fr"><term>Arséniure d'indium</term><term>Semiconducteur III-V</term><term>Composé III-V</term><term>Effet photovoltaïque</term><term>Arséniure de gallium</term><term>Etat fondamental</term><term>Calcul k.p</term><term>Etat excité</term><term>Propriété symétrie</term><term>Absorption optique</term><term>7866</term><term>8105E</term><term>8105H</term></keywords></textClass></profileDesc></teiHeader><front><div type="abstract" xml:lang="en">Edge-photovoltage measurements of InAs/GaAs 1.3 μm dot-in-a-well structures clearly show a ground state (GS) transverse magnetic (TM) absorption. Based on eight-band k.p calculations we attribute this GS TM absorption peak to transitions between GS electrons and low-lying excited hole states which possess a significant light-hole component of the correct symmetry to recombine with the GS electrons.</div></front></TEI><inist><standard h6="B"><pA><fA01 i1="01" i2="1"><s0>0268-1242</s0></fA01><fA02 i1="01"><s0>SSTEET</s0></fA02><fA03 i2="1"><s0>Semicond. sci. technol.</s0></fA03><fA05><s2>28</s2></fA05><fA06><s2>1</s2></fA06><fA08 i1="01" i2="1" l="ENG"><s1>Long wavelength transverse magnetic polarized absorption in 1.3 μm InAs/InGaAs dots-in-a-well type active regions</s1></fA08><fA11 i1="01" i2="1"><s1>CROWLEY (M. T.)</s1></fA11><fA11 i1="02" i2="1"><s1>HECK (S. C.)</s1></fA11><fA11 i1="03" i2="1"><s1>HEALY (S. B.)</s1></fA11><fA11 i1="04" i2="1"><s1>OSBORNE (S.)</s1></fA11><fA11 i1="05" i2="1"><s1>WILLIAMS (D. P.)</s1></fA11><fA11 i1="06" i2="1"><s1>SCHULZ (S.)</s1></fA11><fA11 i1="07" i2="1"><s1>O'REILLY (E. 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All rights reserved.</s1></fA44><fA45><s0>24 ref.</s0></fA45><fA47 i1="01" i2="1"><s0>13-0083035</s0></fA47><fA60><s1>P</s1></fA60><fA61><s0>A</s0></fA61><fA64 i1="01" i2="1"><s0>Semiconductor science and technology</s0></fA64><fA66 i1="01"><s0>GBR</s0></fA66><fC01 i1="01" l="ENG"><s0>Edge-photovoltage measurements of InAs/GaAs 1.3 μm dot-in-a-well structures clearly show a ground state (GS) transverse magnetic (TM) absorption. 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